MOS 晶圆
| Type number |
Gross Die | Wafer Size | Die Size(µm) | Product | VDSS (V) | ID (A) | Configuration | ESD | VGSth (V)max | VGSS(V) | Rdson(mΩ) @VGS10V Typ | Rdson(mΩ) @VGS4.5V Typ | Wafer Thickness | Back Metal | Datasheet |
| HMNC100R20P |
| 150mm | 5246.5*4125 | MOSFET | 100 | 57 | | | | | 20 | | 280 | |  |
| HNM05A2500V |
| 8 inch | 6000×3750 | N | 2500 | 0.5 | | | 4.5 | | 200000 | | 400μm | Ti/Ni/Ag | |
| HSMD4R3N150 |
850 | 8 inch | 6360x5060 | N | 150 | | | | 4.0 | +20V | 3.6 | | 8 (±0.8)mil | Ti/Ni/Ag | |
| HSMDG059A |
4550 | 8 inch | 2090x3060 | N | 40 | | | | 4.0 | +20V/-12V | 2.5 | | 4 (±0.4)mil | Ti/Ni/Ag | |
| HSM200R600 |
40000 | 8 inch | 850×842 | N | 600 | | | | 3.5 | 30 | 120 | | 10mil | Ti/Ni/Ag | |
| HSMDG09-03 |
24000 | 8 inch | 1260×960 | N | 30 | | | | 2.5 | 20 | 6.6 | 9.2 | 4 (±0.4)mil | Ti/Ni/Ag | |
| HSMDG22-40 |
3700 | 8 inch | 3600*1900 | N | 40 | | | | 3.0 | 20 | 1.6 | | 4mil（Taiko) | NiV/Ag | |
| HM5R4V80C |
3460 | 8 inch | 3140*2560 | N | 80 | | | | 3.4 | 20 | 5.4 | | 200um | Ti/Ni/Ag | |
| HNM50A500V |
| 150mm | 7000×10000 | N | 500 | 50 | | | 4.0 | | 0.083 | | 280 | | |
| HNM100A500V |
| 150mm | 14000×10000 | N | 500 | 100 | | | 4.0 | | 40 | | 280 | | |
| HNM18A200V |
| 150mm | 2850×4000 | N | 200 | 18 | | | 4.0 | | 0.16 | | 280 | | |
| HPM40A150V |
| 200mm | 3270×5220 | P | -150 | -40 | | | -3.0 | | 70 | | 175-200 | | |
| HNM500A100V |
| 200mm | 13408×9004 | N | 100 | 500 | | | 5.0 | | 1 | | 175 | | |
| HNM30A100V |
| 200mm | 2460×1860 | N | 100 | 30 | | | 2.5 | | 20 | | 175 | | |
| HNM5A1050V |
| 150mm | 5000×3600 | N | 1050 | 5 | | | 4.0 | | 2.0 | | 280 | | |
| HPM05A30V |
| 200mm | 970×670 | P | -30 | -4.5 | | | 1.4 | | 50 | 65 | 175 | | |
| HNM80A100V |
| 200mm | 3158×2600 | N | 100 | 80 | | | 1.0 | | 7.2 | 9.5 | 200 | | |
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